In this paper, we observed the characteristics of vertical tunneling field effect transistors and performed biosensor application using the analysis of germanium-silicon VTFET. The operation of the vertical tunneling field effect transistor is different when compared to the lateral tunneling field effect transistor in the tunneling field effect transistors the tunneling process happens based on the B to B tunneling. But the direction of the tunneling happens in the tunneling field effect transistors are not the same. The vertical tunneling field effect transistors have more lead compared to the L-tunneling FET. The dual material double gate tunneling technique (VTDMDG-TFET) is developed to improve the properties like capability of current driving, swing of subthreshold, and ratio of switching, in the vertical tunneling field effect transistor. The different dielectric materials are being suggested in vertical tunnel field effect transistors (VTFET). In these Germanium (Ge) acts as source material and Silicon (Si) acts as drain material to enhance the ON-state current. The enhancement of heterojunction to the carrier tunneling can be done at the source channel junction. There are several states are obtained for the increment of the carrier tunneling. The heightening of suggested Ge-Si obtained Vertical tunneling field effect transistors (considering analog /Radiofrequency measures) against the regular Vertical tunneling field effect transistors. The biosensor application is operated by the N+ pocket doping method, With the help of an electric field, electrostatic potential and drain current with verified simulated device data. In performing biosensor application, it is important to consider a germane material and structure like a HDB-VTFET. It made a drastic change on every parameter of the device like in low off-current state crackdown on the ambipolar behavior. This model consists of both dielectric constant, charge and proper solution application for neutral and charged biomolecules.