Aim: This work describes InGaN based High Electron Mobility Transistors (HEMTs) which includes Biharmonic and Cubic optimization for microwave applications. Materials and Methods: The Biharmonic and Cubic optimization methods are implemented to improve the thermal noise current by varying the cut-off frequency of HEMTs. Two groups are considered where, group 1 is biharmonic and group 2 is cubic optimization. Each group has 7 samples and a total of 14 sample sizes. The G power calculation of 0.8. Result: The thermal noise current will be improved by the variation of the cut-off frequency in HEMTs. SPSS analysis is carried out and has a significance of 0.685 (p>0.05, statistically insignificant). The thermal noise value of 1.7 db compared with 1.3 db at cutoff frequency 0.16G Hz by using Biharmonic and cubic optimisation respectively for dimension of L=1μm and W=200μm. Conclusion: The Biharmonic optimization would get a higher improvement of thermal noise current than Cubic optimization by using Novel Artificial Intelligence Optimization.