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ISSN 2063-5346
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SHEET CARRIER CHARGE IMPROVEMENT OF ALGAN/GAN HEMT USING 2DEG COMPARED WITH 2DHG BY MITIGATION LOSS OF DRAIN POTENTIAL

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Dinakaran M, Anbuselvan N
» doi: 10.31838/ecb/2023.12.sa1.335

Abstract

Aim: An accurate charge control model is proposed with the 2DHG to look over the effect of doping, strain relaxation, aluminum composition, and thickness of the AlGaN/GaN barrier layer on the piezoelectric with continuous polarization induced 2-DEG sheet charge density and output characteristics of the temporarily relaxed AlGaN/GaN HEMT (2DHG). Materials and methods: In the closed gate AlGaN/GaN HEMT, the controlled 2DEG is going to succeed a great performance in power electronic devices by adding the parameter of recess high. Two groups are considered where, group 1 is 2DEG and group 2 is 2DHG. Each group has 7 samples and a total of 14 sample sizes. Results: The charge density of 2DEG gets increased in channel, when the mole fraction of Al gets increasing for an experiment of open gate AlGaN/GaN HEMT. SPSS analysis is carried out and has a significance of 0.0098 (p<0.05, statistically significant). Conclusion: The two dimensional electron gas (2DEG) provides better improvement of sheet carrier density compared to two dimensional hole gas (2DEG).

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