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BIOCHEMISTRY OF FASTING – A REVIEW ON METABOLIC SWITCH AND AUTOPHAGY.
Volume - 13 | Issue-1
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ONE-POT ENVIRONMENT FRIENDLY SYNTHESIS OF IMINE DERIVATIVE OF FURFURAL AND ASSESSMENT OF ITS ANTIOXIDANT AND ANTIBACTERIAL POTENTIAL
Volume - 13 | Issue-1
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MODELING AND ANALYSIS OF MEDIA INFLUENCE OF INFORMATION DIFFUSION ON THE SPREAD OF CORONA VIRUS PANDEMIC DISEASE (COVID-19)
Volume - 13 | Issue-1
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INCIDENCE OF HISTOPATHOLOGICAL FINDINGS IN APPENDECTOMY SPECIMENS IN A TERTIARY CARE HOSPITAL IN TWO-YEAR TIME
Volume - 13 | Issue-1
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SEVERITY OF URINARY TRACT INFECTION SYMPTOMS AND THE ANTIBIOTIC RESISTANCE IN A TERTIARY CARE CENTRE IN PAKISTAN
Volume - 13 | Issue-1
PECULIARITIES OF “ALLOY” SCATTERING IN SEMICONDUCTORS
Main Article Content
Abstract
The effect of nanometer size disordered regions in SixGe1–x and InPxAs1–x semiconductor alloys on the mobility ofcharge carriers has been investigated. The investigation has shown, that the composition dependence of the mobility appears as a result of contribution of main processes of current carriers scattering on phonons, ionized impurities and “alloy” disorders in SixGe1–x and InPxAs1–x alloys. We have calculated the contribution of these scattering processes towards total scattering. Share of contribution of “alloy” disorders into the total mobility is different for SixGe1–x and InPxAs1–x solid solutions. Unlike SixGe1–x alloys, the “alloy” disorders in InPxAs1–x practically do not disturb the crystal lattice in a tangible way at temperatures in the range of 4.2 – 300 K because of sublattices of InP and InAs retain certain individuality in InPxAs1–x alloys.
Article Details
