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ISSN 2063-5346
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HYDROGEN BOND BETWEEN HALOFORMS AND CHLORIDES OF SILICON AND GERMANIUM IN LOW - TEMPERATURE FILMS

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I. I. Grinvald,[a] I. Yu. Kalagaev,[a] A. V. Vorotyntsev,[a] A. N. Petukhov[a] A. I. Grushevskaya[a] R. V. Kapustin[a] and I. V. Vorotyntsev
» doi: 10.17628/ecb.2017.6.219-222

Abstract

The FTIR study allowed to reveal that a hydrogen bond can arise in low - temperature films at 20 K between chloroform, bromoform and tetrachlorides of silicon and germanium, as well as a dihydrogen bond between chloroform and trichlorosilane. The general scheme of molecular interaction was simulated by ab initio calculation in terms of the DFT method. It was shown that the hydrogen atom of methane halides bound with the negatively charged chlorine atom of silicon or germanium tetrachloride, accompanied by transformation of their geometry from molecular symmetry Td to C3V.

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