In the theoretical investigation of molecule structure, topological descriptors provide an effective approach to complicated quantum chemical calculations. They are extremely useful in studying the physical, chemical, and structural properties of chemical graphs, such as molecular weight, boiling temperature, and density. The study of chemical graphs through topological descriptors or indices are very important to understand their fundamental topologies. Silicon, the second most prevalent material on the planet, it has a wide range of industrial uses due to their thermal and chemical stability, non-oxidizing behavior and high melting point. In this research work, several degree-based irregularity topological indices were investigated for certain silicon carbide graphs i.e., ????????2????3–????(????,????), ????????2????3–????????(????,????) and ????????2????3–????????????(????,????). The results for the computed topological indices for different types of silicon carbides are also presented graphically.