Aim: The aim of this research work is to determine the simulation of a single gate MOScapacitor using “MOScap '' with p+ and n+ polysilicon type gate electrodes for estimating the capacitance. Materials and Methods: Data collection containing estimation of capacitance from the nanohub website was used in this research. Samples were considered as (N=20) for p+ polysilicon and (N=20) for n+ polysilicon in accordance with the total sample size calculated using clinical.com. Results: Comparison of capacitance is done by independent sample test using SPSS software. There is a statistical indifference between p+ polysilicon and n+ polysilicon. p+ poly silicon (3.7629%) showed better results in comparison to n+ polysilicon (3.2053%) where the p value is insignificant (p=0.673,p>0.05). Conclusion: p+ poly silicon appears to give better capacitance than n + polysilicon to estimate capacitance.