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ISSN 2063-5346
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SIMULATING THE EFFECTS OF INSULATOR AL2O3 AND ITS COMPARING HFO2 IN ION SENSITIVE FIELD EFFECT TRANSISTOR TO PREDICT THE CONDUCTANCE USING ENBIOS 2D

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Sowjenya. M, Chandra Kishore. S
» doi: 10.31838/ecb/2023.12.sa1.359

Abstract

Aim: The aim of this research work is to predict the conductance of insulators Al2O3 and HfO2 based ISFET are simulated by varying their oxide thickness ranging from 3nm to 22nm using Enbios 2D lab. Material and Methods: The dataset for this study collected via nanoHub simulation. Samples were considered (N=20) for Al2O3 and (N=20) for HfO2 using clinicalc.com by keeping alpha error-threshold value 0.05, enrollment ratio as 1, 95% confidence interval, power as 80% , total sample size calculated. The conductance of the insulator is done by independent sample t-test SPSS software. Result: Comparison of conductance is done by independent sample T test using SPSS software. The statistical significant difference was observed between insulator Al2O3 and HfO2. Significantly Al2O3 (80%) showed better conductance results in comparison to HfO2 (78%) with p=0.007, p<0.05 using independent sample T test Conclusion: Al2O3 insulator showed higher conductance than HfO2

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